A hidden phase uncovered by ultrafast carrier dynamics in thin Bi<sub>2</sub>O<sub>2</sub>Se-Reference-Cited by-同舟云学术

A hidden phase uncovered by ultrafast carrier dynamics in thin Bi₂O₂Se

Published:2024 Issue:8 Volume:16 Page:4189-4196
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Hao¹²,Nairan Adeela³,Niu Xiaoran¹²,Chen Yuxiang⁴,Sun Huarui⁴^ORCID,Lai Linqing⁵,Qin Jingkai⁵,Dang Leyang⁶,Wang Guigen⁶,Khan Usman³,He Feng¹²^ORCID

Affiliation:

1. State Key Laboratory on Tunable Laser Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China

2. Guangdong Provincial Key Laboratory of Aerospace Communication and Networking Technology, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China

3. Institute of Functional Porous Materials, School of Materials Science and Engineering, Zhejiang Sci-Tech University, Hangzhou 310018, P. R. China

4. School of Science and Ministry of Industry and Information Technology, Key Laboratory of Micro-Nano Opto-electronic Information System, Harbin Institute of Technology (Shenzhen), Shenzhen, Guangdong 518055, P. R. China

5. Sauvage Laboratory for Smart Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China

6. Shenzhen Key Laboratory for Advanced Materials, School of Materials Science and Engineering, Harbin Institute of Technology (Shenzhen), Shenzhen 518055, P. R. China

Abstract

A systematic study of thickness- and fluence-dependent carrier dynamics reveals the hidden ferroelectric transition in CVD-grown Bi2O2Se thin films, offering potential applications in optoelectronic devices that benefit from this transition.

Funder

Science and Technology Planning Project of Shenzhen Municipality

China Postdoctoral Science Foundation

National Natural Science Foundation of China

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR05625B

Reference46 articles.

1. An Ultrabroadband Mid-Infrared Pulsed Optical Switch Employing Solution-Processed Bismuth Oxyselenide

2. Broadband Bi 2 O 2 Se Photodetectors from Infrared to Terahertz

3. Progress Report on Property, Preparation, and Application of Bi 2 O 2 Se

4. Unveiling the Fine Structural Distortion of Atomically Thin Bi 2 O 2 Se by Third‐Harmonic Generation

5. Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi 2 O 2 Se