Effect of thiophene/furan substitution on organic field effect transistor properties of arylthiadiazole based organic semiconductors-Reference-Cited by-同舟云学术

Effect of thiophene/furan substitution on organic field effect transistor properties of arylthiadiazole based organic semiconductors

Published:2020 Issue:48 Volume:8 Page:17297-17306
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Pachariyangkun Anna¹²³⁴⁵,Suda Masayuki⁶⁷⁸,Hadsadee Sarinya⁹¹⁰¹¹¹²⁵,Jungsuttiwong Siriporn⁹¹⁰¹¹¹²⁵^ORCID,Nalaoh Phattananawee¹²³⁴⁵^ORCID,Pattanasattayavong Pichaya¹²³⁴⁵^ORCID,Sudyoadsuk Taweesak¹²³⁴⁵,Yamamoto Hiroshi M.⁶⁷⁸,Promarak Vinich¹²³⁴⁵^ORCID

Affiliation:

1. Department of Materials Science and Engineering

2. School of Molecular Science and Engineering

3. Vidyasirimedhi Institute of Science and Technology

4. Rayong 21210

5. Thailand

6. Institute for Molecular Science

7. Okazaki 444-8585

8. Japan

9. Department of Chemistry and Center of Excellence for Innovation in Chemistry

10. Faculty of Science

11. Ubon Ratchathani University

12. Ubon Ratchathani 34190

Abstract

This study determines that furan could display comparable charge transport properties to its thiophene analogue. The OFET device employing furan-substituted benzothiadiazole as the channel layer showed a mobility (μ_max) of 0.0122 cm² V⁻¹ s⁻¹.

Funder

Thailand Research Fund

Japan Society for the Promotion of Science

National Science and Technology Development Agency

Ministry of Education, Culture, Sports, Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC04982D

Reference60 articles.