Inch-size Cs3Bi2I9 polycrystalline wafers with near-intrinsic properties for ultralow-detection-limit X-ray detection

Author:

Bu Nuo1,Jia Shanshan1,Xiao Yingrui1,Li Haojin1,Li Nan1,Liu Xinmei1,Yang Zhou1ORCID,Zhao Kui1ORCID,Liu Shengzhong (Frank)12ORCID

Affiliation:

1. Key Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, Shaanxi Key Laboratory for Advanced Energy Devices, Shaanxi Engineering Lab for Advanced Energy Technology, Institute for Advanced Energy Materials; School of Materials Science and Engineering, Shaanxi Normal University, Xi’an 710119, China

2. Dalian National Laboratory for Clean Energy, Dalian Institute of Chemical Physics, Chinese Academy of Sciences, Dalian 116023, China

Abstract

A scalable method has been developed to fabricate large size Cs3Bi2I9 wafer by hot-pressing ball-milled Cs3Bi2I9 powder. The wafer shows near-intrinsic properties and good optoelectronic properties to achieve a detector with low X-ray detection limit.

Funder

National Natural Science Foundation of China

Shaanxi Normal University

Higher Education Discipline Innovation Project

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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