Ultrahigh anisotropic carrier mobility in ZnSb monolayers functionalized with halogen atoms-Reference-Cited by-同舟云学术

Ultrahigh anisotropic carrier mobility in ZnSb monolayers functionalized with halogen atoms

Published:2022 Issue:41 Volume:12 Page:26994-27001
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Yang Wei¹^ORCID,Guan Zhizi¹,Wang Hongfa¹,Chen Yongchao¹,Wang Hailong¹^ORCID,Li Junwen²^ORCID

Affiliation:

1. CAS Key Laboratory of Mechanical Behavior and Design of Materials, Department of Modern Mechanics, CAS Center for Excellence in Complex System Mechanics, University of Science and Technology of China, Hefei, Anhui 230027, China

2. DFTWorks LLC, Oakton, VA 22124, USA

Abstract

Ultrahigh carrier mobility and transport anisotropy in ZnSb monolayers functionalized with halogen atoms.

Funder

National Natural Science Foundation of China

Central University Basic Research Fund of China

University of Science and Technology of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D2RA04782A

Reference52 articles.

1. First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials

2. Two-dimensional atomic crystals

3. Electric Field Effect in Atomically Thin Carbon Films

4. Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

5. Single-layer MoS2 transistors

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