Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition-Reference-Cited by-同舟云学术

Dissociative ionization and electron beam induced deposition of tetrakis(dimethylamino)silane, a precursor for silicon nitride deposition

Published:2022 Issue:16 Volume:24 Page:9564-9575
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Shih Po-Yuan¹²,Tafrishi Reza³^ORCID,Cipriani Maicol³^ORCID,Hermanns Christian Felix¹,Oster Jens¹,Gölzhäuser Armin²^ORCID,Edinger Klaus¹,Ingólfsson Oddur³^ORCID

Affiliation:

1. Carl Zeiss SMT GmbH, Industriestraße 1, 64380 Roßdorf, Germany

2. Faculty of Physics, Bielefeld University, 33615 Bielefeld, Germany

3. Science Institute and Department of Chemistry, University of Iceland, Dunhagi 3, 107 Reykjavik, Iceland

Abstract

Information about the interaction of low energy electrons with precursors helps us improve the composition of electron-induced deposits in the semi-conductor industry.

Funder

Icelandic Centre for Research

H2020 Marie Skłodowska-Curie Actions

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2022/CP/D2CP00257D

Reference61 articles.

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4. Handbook of semiconductor manufacturing technology , ed. Nishi; Y. and Doering; R. T. , CRC Press , 2008 , 2nd edn

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