Customization of Sn2P2S6 ferroelectrics by post-growth solid-state diffusion doping

Author:

Shvalya Vasyl123,Zavašnik Janez123ORCID,Nasretdinova Venera423ORCID,Uršič Hana123ORCID,Kovač Janez123,Grabar Alexander5678ORCID,Kohutych Anton5678,Molnar Alexander5678,Evans Dean R.9101112ORCID,Mihailović Dragan D.12342,Cvelbar Uroš123ORCID

Affiliation:

1. Jožef Stefan Institute

2. Ljubljana SI-1000

3. Slovenia

4. CENN Nanocenter

5. Uzhgorod University

6. Inst Solid State Phys & Chem

7. UA-88000 Uzhgorod

8. Ukraine

9. Air Force Research Laboratory

10. Materials and Manufacturing Directorate

11. Wright-Patterson Air Force Base

12. USA

Abstract

For the first time, we demonstrated successful post-synthesis incorporation of metal dopants at elevated temperature into a host structure of Sn2P2S6, known as the grandfather of dichalcogenide ferroelectrics with a formula M2P2X6 (M = metal and X = chalcogen).

Funder

Javna Agencija za Raziskovalno Dejavnost RS

Science and Technology Center in Ukraine

Erasmus+

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

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