Responsive charge transport in wide-band-gap oxide films of nanostructured amorphous alkali-gallium-germanosilicate-Reference-Cited by-同舟云学术

Responsive charge transport in wide-band-gap oxide films of nanostructured amorphous alkali-gallium-germanosilicate

Published:2019 Issue:25 Volume:7 Page:7768-7778
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Remondina J.¹²³⁴^ORCID,Paleari A.¹²³⁴⁵^ORCID,Golubev N. V.⁵⁶⁷⁸,Ignat’eva E. S.⁵⁶⁷⁸,Sigaev V. N.⁵⁶⁷⁸,Acciarri M.¹²³⁴,Trabattoni S.¹²³⁴^ORCID,Sassella A.¹²³⁴^ORCID,Lorenzi R.¹²³⁴^ORCID

Affiliation:

1. Department of Materials Science

2. University of Milano – Bicocca

3. Milano

4. Italy

5. P.D. Sarkisov International Laboratory of Glass-based Functional Materials

6. Mendeleev University of Chemical Technology of Russia

7. 125190 Moscow

8. Russia

Abstract

Ga-Oxide nano-segregation in alkali-germanosilicate amorphous films gives rise to a responsive material with nonlinear electric conduction and hysteretic charging mechanisms.

Funder

Ministero dell’Istruzione, dell’Università e della Ricerca

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC02080B

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