Metal-agglomeration-suppressed growth of MoS2 and MoSe2 films with small sulfur and selenium molecules for high mobility field effect transistor applications-Reference-Cited by-同舟云学术

Metal-agglomeration-suppressed growth of MoS2 and MoSe2 films with small sulfur and selenium molecules for high mobility field effect transistor applications

Published:2018 Issue:32 Volume:10 Page:15213-15221
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Jung Kwang Hoon¹²³⁴⁵,Yun Sun Jin¹²³⁴⁵^ORCID,Choi Yongsuk⁶⁷⁸⁴,Cho Jeong Ho⁶⁷⁸⁴,Lim Jung Wook¹²³⁴⁵,Chai Hyun-Jun¹²³⁴⁵,Cho Dae-Hyung¹²³⁴^ORCID,Chung Yong-Duck¹²³⁴⁵^ORCID,Kim Gayoung¹²³⁴⁵

Affiliation:

1. ICT Materials Research Group

2. Electronics and Telecommunications Research Institute

3. Daejeon 34129

4. Republic of Korea

5. Department of Advanced Device Technology

6. SKKU Advanced Institute of Nanotechnology (SAINT)

7. Sungkyunkwan University

8. Suwon 16419

Abstract

This work reports an innovative method for achieving high quality MoS₂ and MoSe₂ films uniformly on large-area wafers at growth temperatures of 600 °C or lower.

Funder

Ministry of Science, ICT and Future Planning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR03778G

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