The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δepitaxial films-Reference-Cited by-同舟云学术

The effect of growth oxygen pressure on the metal–insulator transition of ultrathin Sm0.6Nd0.4NiO3−δepitaxial films

Published:2014 Issue:98 Volume:4 Page:55082-55086
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Huang Haoliang¹²³⁴²,Luo Zhenlin⁴²³⁵⁶,Yang Yuanjun⁴²³⁵⁶,Yang Mengmeng⁴²³⁵⁶,Wang Haibo⁴²³⁵⁶,Pan Guoqiang⁴²³,Lu Yalin⁵⁶²³,Gao Chen¹²³⁴²

Affiliation:

1. Department of Physics

2. University of Science and Technology of China

3. Hefei, China

4. National Synchrotron Radiation Laboratory & Collaborative Innovation Centre of Chemistry for Energy Materials

5. CAS Key Laboratory of Materials for Energy Conversion

6. Department of Materials Science and Engineering

Abstract

Ultrathin Sm_0.6Nd_0.4NiO_3−δepitaxial films were deposited by pulsed laser deposition (PLD) onto LaAlO₃(LAO) single crystal substrates. TheT_MIof the SNNO films remarkably decreases with the decrease of the growth oxygen pressure, while the strain state varied slightly.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA09535A

Reference36 articles.

1. Progress in perovskite nickelate research

2. Classifying multiferroics: Mechanisms and effects

3. Multiferroics: a magnetic twist for ferroelectricity

4. Oxygen nonstoichiometry of NdNiO3−δ and SmNiO3−δ

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