Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride-Reference-Cited by-同舟云学术

Electronic structure engineering of tin telluride through co-doping of bismuth and indium for high performance thermoelectrics: a synergistic effect leading to a record high room temperature ZT in tin telluride

Published:2019 Issue:16 Volume:7 Page:4817-4821
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Shenoy U. Sandhya¹²³⁴⁵^ORCID,Bhat D. Krishna¹⁶⁷⁵^ORCID

Affiliation:

1. Department of Chemistry

2. College of Engineering and Technology

3. Srinivas University

4. Mukka

5. India

6. National Institute of Technology Karnataka

7. Surathkal

Abstract

Resonance states due to Bi and In co-doping, band gap enlargement, and a reduced valence-band offset in SnTe lead to a record high room-temperature ZT.

Funder

Science and Engineering Research Board

Council of Scientific and Industrial Research, India

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C9TC01184F

Reference22 articles.

1. Recent progress towards high performance of tin chalcogenide thermoelectric materials

2. Eco‐Friendly SnTe Thermoelectric Materials: Progress and Future Challenges