Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides-Reference-Cited by-同舟云学术

Large scale 2D/3D hybrids based on gallium nitride and transition metal dichalcogenides

Published:2018 Issue:1 Volume:10 Page:336-341
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Kehao¹²³⁴⁵^ORCID,Jariwala Bhakti¹²³⁴^ORCID,Li Jun⁶⁷⁸⁴,Briggs Natalie C.¹²³⁴,Wang Baoming⁵³⁴⁹²,Ruzmetov Dmitry⁵³⁴¹⁰¹¹,Burke Robert A.⁵³⁴¹⁰¹¹,Lerach Jordan O.¹²²¹³⁴,Ivanov Tony G.⁵³⁴¹⁰¹¹,Haque Md⁵³⁴⁹²^ORCID,Feenstra Randall M.⁶⁷⁸⁴,Robinson Joshua A.¹²³⁴⁵

Affiliation:

1. Department of Materials Science and Engineering & Center for Two-Dimensional and Layered Materials

2. The Pennsylvania State University

3. University Park

4. USA

5. Center for Atomically Thin Multifunctional Coating

6. Department of Physics

7. Carnegie Mellon University

8. Pittsburgh

9. Department of Mechanical and Nuclear Engineering

10. Sensors and Electron Devices Directorate

11. U.S. Army Research Laboratory

12. Materials Characterization Laboratory

13. University Park 16802

Abstract

Large area 2D MoS₂ and WSe₂ are integrated on 3D GaN by metal organic chemical vapor deposition (MOCVD). The thickness-dependent vertical tunneling and interlayer charge transfer is carefully studied. This work shows that few layer WSe₂ film is the appropriate choice towards device application of synthetic 2D/3D heterostructures.

Funder

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C7NR07586C

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1. Field-Effect Tunneling Transistor Based on Vertical Graphene Heterostructures

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