Intense pulsed light (IPL) annealed sol–gel derived ZnO electron injector for the production of high efficiency inverted quantum dot light emitting devices (QLEDs)-Reference-Cited by-同舟云学术

Intense pulsed light (IPL) annealed sol–gel derived ZnO electron injector for the production of high efficiency inverted quantum dot light emitting devices (QLEDs)

Published:2018 Issue:64 Volume:8 Page:36632-36646
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Kathirgamanathan Poopathy¹²³⁴^ORCID,Kumaraverl Muttulingam¹²³⁴,Vanga Raghava Reddy¹²³⁴,Ravichandran Seenivasagam¹²³⁴

Affiliation:

1. Organic Electronics Group

2. Wolfson Centre

3. Brunel University London

4. UK

Abstract

Room temperature intense pulsed light annealing (photonic annealing, pulsed forge) renders the sol–gel derived ZnO films highly conductive and hydrophobic with improved interface with the colloidal quantum dots.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/RA/C8RA08136K

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2. Intense pulsed light for split-second structural development of nanomaterials

3. A review of thermal processing in the subsecond range: semiconductors and beyond

4. Ultrastructural Characterization of the Lower Motor System in a Mouse Model of Krabbe Disease

5. Intensive Plasmonic Flash Light Sintering of Copper Nanoinks Using a Band-Pass Light Filter for Highly Electrically Conductive Electrodes in Printed Electronics

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