Hydrogen absorption boosting in mildly annealed bulk MoS2

Author:

Obando-Guevara Jairo12ORCID,González-García Álvaro1,Rosmus Marcin3ORCID,Olszowska Natalia3ORCID,González César14,Morón-Navarrete Guillermo1ORCID,Fujii Jun5ORCID,Tejeda Antonio2ORCID,González-Barrio Miguel Ángel1ORCID,Mascaraque Arantzazu1ORCID

Affiliation:

1. Dto. de Física de Materiales, Universidad Complutense de Madrid, 28040 Madrid, Spain

2. Laboratoire de Physique des Solides, CNRS, Université Paris-Saclay, 91405 Orsay, France

3. National Synchrotron Radiation Centre SOLARIS, Jagiellonian University, Czerwone Maki 98, PL-30392 Kraków, Poland

4. Instituto de Magnetismo Aplicado UCM-ADIF, E-28232 Las Rozas de Madrid, Spain

5. Istituto Officina dei Materiali (IOM)-CNR, Laboratorio TASC, I-34149 Trieste, Italy

Abstract

We present study based on ARPES and DFT on the modifications in the electronic structure of MoS2 resulting from the introduction of sulphur defects by soft annealing and their role in hydrogen adsorption.

Funder

Ministerio de Ciencia, Innovación y Universidades

Comunidad de Madrid

Agence Nationale de la Recherche

Banco Santander

Instituto de Física de Cantabria

Universidad Complutense de Madrid

Publisher

Royal Society of Chemistry (RSC)

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