Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Significant quality improvement of GaN on Si(111) upon formation of an AlN defective layer

Published:2014-07-01 Issue:32 Volume:16 Page:7525
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Feng Yuxia,Wei Hongyuan,Yang Shaoyan,Zhang Heng,Kong Susu,Zhao Guijuan,Liu Xianglin

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/CE/C4CE01164C

Reference19 articles.

1. GaN-based optoelectronics on silicon substrates

2. Influence of AlN nucleation layers on growth mode and strain relief of GaN grown on 6H–SiC(0001)

3. GaN on Si Substrate with AlGaN/AlN Intermediate Layer

4. Metalorganic chemical vapor deposition of GaN on Si(111): Stress control and application to field-effect transistors

5. Effect of buffer layer on the growth of GaN on Si substrate

Cited by 11 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization of the N-polar GaN film grown on C-plane sapphire and misoriented C-plane sapphire substrates by MOCVD;Chinese Physics B;2021-11-20

2. Current Trends in the Development of Normally-OFF GaN-on-Si Power Transistors and Power Modules: A Review;Journal of Electronic Materials;2020-08-09

3. Vapor-Phase Epitaxy of AlN Layers on AlN/Si(111) Templates Synthesized by Reactive Magnetron Sputtering;Technical Physics Letters;2020-04

4. Stress study of GaN grown on serpentine-channels masked Si(111) substrate by MOCVD;Superlattices and Microstructures;2019-06

5. Stress control and dislocation reduction in the initial growth of GaN on Si (111) substrates by using a thin GaN transition layer;CrystEngComm;2019

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3