Reducing trap density and carrier concentration by a Ge additive for an efficient quasi 2D/3D perovskite solar cell

Author:

Ng Chi Huey1234ORCID,Hamada Kengo1234,Kapil Gaurav56748,Kamarudin Muhammad Akmal89710,Wang Zhen1234ORCID,likubo Satoshi1234,Shen Qing111274ORCID,Yoshino Kenji1314154,Minemoto Takashi1617184,Hayase Shuzi89710

Affiliation:

1. Graduate School of Life Science and Systems Engineering

2. Kyushu Institute of Technology

3. Kitakyushu

4. Japan

5. The University of Tokyo

6. Research Center for Advanced Science and Technology

7. Tokyo

8. Info-Powered Energy System Research Center (i-PERC)

9. The University of Electro-Communications

10. 182-8585 Japan

11. Graduate School of Informatics and Engineering

12. University of Electro-Communications

13. Faculty of Engineering

14. University of Miyazaki

15. Miyazaki

16. Department of Electrical and Electronic Engineering

17. Ritsumeikan University

18. Kusatsu

Abstract

The incorporation of the GeI2 additive in novel quasi-2D/3D Sn perovskites suppresses Sn2+ oxidation and trap densities, thus enhancing the carrier dynamics of the perovskite materials.

Funder

Japan Science and Technology Corporation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

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