Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays-Reference-Cited by-同舟云学术

Morphology and composition controlled growth of polar c-axis and nonpolar m-axis well-aligned ternary III-nitride nanotube arrays

Published:2015 Issue:39 Volume:7 Page:16481-16492
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Huijie¹²³⁴,Zhao Guijuan¹²³⁴,Kong Susu¹²³⁴,Han Dongyue¹²³⁴,Wei Hongyuan¹²³⁴,Wang Lianshan¹²³⁴,Chen Zhen⁵⁶⁷,Yang Shaoyan¹²³⁴

Affiliation:

1. Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices

2. Institute of Semiconductors

3. Chinese Academy of Sciences

4. Beijing 100083, People's Republic of China

5. LatticePower (Jiangxi) Corporation

6. National High-Tech Industrial Development Zone

7. Nanchang, Peoples Republic of China

Abstract

By depositing AlN on the InN nanorod arrays and thermally removing the InN templates, polar c-axis and nonpolar m-axis InAlN nanotube arrays with controllable morphologies and compositions can be obtained.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR04524J

Reference59 articles.

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2. Highly Sensitive and Fast Anion-Selective InN Quantum Dot Electrochemical Sensors

3. Vertically p–n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

4. Dopant-Free GaN/AlN/AlGaN Radial Nanowire Heterostructures as High Electron Mobility Transistors

5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

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