Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization-Reference-Cited by-同舟云学术

Optical and electrical properties of Al:WS2 films prepared by atomic layer deposition and vulcanization

Published:2016 Issue:69 Volume:6 Page:64879-64884
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Li Ning¹²³⁴⁵,Feng Li-ping¹²³⁴⁵,Su Jie¹²³⁴⁵,Zeng Wei¹²³⁴⁵,Liu Zheng-tang¹²³⁴⁵

Affiliation:

1. State Key Lab of Solidification Processing

2. College of Materials Science and Engineering

3. Northwestern Polytechnical University

4. Xi'an

5. China

Abstract

Composition, structure, optical and electrical properties of Al:WS₂ (un-doped and Al-doped WS₂) films prepared by atomic layer deposition (ALD) and CS₂ vulcanization processing have been studied.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA10474F

Reference44 articles.

1. Field-Effect Transistors Based on WS2 Nanotubes with High Current-Carrying Capacity

2. Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials

3. Mono- and Bilayer WS2 Light-Emitting Transistors

4. Nonblinking, Intense Two-Dimensional Light Emitter: Monolayer WS2 Triangles

5. Graphene transistors

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