Radiation damage effects in Ga2O3 materials and devices-Reference-Cited by-同舟云学术

Radiation damage effects in Ga2O3 materials and devices

Published:2019 Issue:1 Volume:7 Page:10-24
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Kim Jihyun¹²³⁴^ORCID,Pearton Stephen J.⁵⁶⁷⁸^ORCID,Fares Chaker⁹⁶⁷⁸^ORCID,Yang Jiancheng⁹⁶⁷⁸,Ren Fan⁹⁶⁷⁸^ORCID,Kim Suhyun¹²³⁴,Polyakov Alexander Y.¹⁰¹¹¹²

Affiliation:

1. Department of Chemical & Biological Engineering

2. Korea University

3. Sungbuk-gu

4. Korea

5. Department of Materials Science and Engineering

6. University of Florida

7. Gainesville

8. USA

9. Department of Chemical Engineering

10. National University of Science and Technology MISiS

11. Moscow

12. Russia

Abstract

The strong bonding in wide bandgap semiconductors gives them an intrinsic radiation hardness.

Funder

Defense Threat Reduction Agency

National Research Foundation of Korea

Ministry of Education and Science of the Russian Federation

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC04193H

Reference81 articles.

1. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges

2. High-quality β-Ga2O3single crystals grown by edge-defined film-fed growth

3. Group-III Sesquioxides: Growth, Physical Properties and Devices

4. Perspective—Opportunities and Future Directions for Ga2O3

5. Structural, Optical, and Electrical Characterization of Monoclinic β-Ga2O3 Grown by MOVPE on Sapphire Substrates

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