Prediction of intermediate band in Ti/V doped γ-In<sub>2</sub>S<sub>3</sub>-Reference-Cited by-同舟云学术

Prediction of intermediate band in Ti/V doped γ-In₂S₃

Published:2022 Issue:3 Volume:12 Page:1331-1340
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Jebasty R. Mariyal¹,Sjåstad Anja Olafsen²^ORCID,Vidya R.¹^ORCID

Affiliation:

1. Department of Medical Physics, Anna University, Sir C. V. Raman Advanced Science Block, Sardar Patel Road, Guindy, Chennai - 600 025, India

2. Centre for Materials Science and Nanotechnology, Department of Chemistry, University of Oslo, PO Box 1033, N-0315 Oslo, Norway

Abstract

We find the band structure of In1.5V0.5S3with HSE functional, where the vanadium atom introduces an intermediate band inside the forbidden gap in the γ-phase of In2S3.

Funder

Norges Forskningsråd

Anna University

Senter for Internasjonalisering av Utdanning

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/RA/D0RA08132A

Reference58 articles.

1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels

2. Detailed balance limit of the efficiency of tandem solar cells

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5. High-Efficiency Planar Hybrid Perovskite Solar Cells Using Indium Sulfide as Electron Transport Layer

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