Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO3-based heterojunctions-Reference-Cited by-同舟云学术

Resistive switching induced by charge trapping/detrapping: a unified mechanism for colossal electroresistance in certain Nb:SrTiO3-based heterojunctions

Published:2017 Issue:29 Volume:5 Page:7317-7327
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Fan Zhen¹²³⁴⁵^ORCID,Fan Hua¹²³⁴⁵,Yang Lin¹²³⁴⁵,Li Peilian¹²³⁴⁵,Lu Zengxing⁶⁷⁸⁵,Tian Guo¹²³⁴⁵,Huang Zhifeng¹²³⁴⁵,Li Zhongwen¹²³⁴⁵,Yao Junxiang¹²³⁴⁵,Luo Qiuyuan¹²³⁴⁵,Chen Chao¹²³⁴⁵,Chen Deyang¹²³⁴⁵,Yan Zhibo⁶⁷⁸⁵,Zeng Min¹²³⁴⁵,Lu Xubing¹²³⁴⁵,Gao Xingsen¹²³⁴⁵^ORCID,Liu Jun-Ming¹²³⁴⁵

Affiliation:

1. Institute for Advanced Materials (IAM) and Guangdong Provincial Key Laboratory of Quantum Engineering and Quantum Materials

2. South China Academy of Advanced Optoelectronics

3. South China Normal University

4. Guangzhou 510006

5. China

6. Laboratory of Solid State Microstructures and Innovation Center of Advanced Microstructures

7. Nanjing University

8. Nanjing 210093

Abstract

A unified mechanism for the colossal electroresistance effects in Nb:SrTiO3-based heterojunctions is revealed.

Funder