Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE-Reference-Cited by-同舟云学术

Correlation of growth temperature with stress, defect states and electronic structure in an epitaxial GaN film grown on c-sapphire via plasma MBE

Published:2016 Issue:11 Volume:18 Page:8005-8014
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Krishna Shibin¹²³⁴⁵,Aggarwal Neha¹²³⁴⁵,Mishra Monu¹²³⁴⁵,Maurya K. K.⁶⁷³⁴,Singh Sandeep⁶⁷³⁴,Dilawar Nita⁸⁷³⁴,Nagarajan Subramaniyam⁹¹⁰¹¹¹²,Gupta Govind¹²³⁴⁵

Affiliation:

1. Academy of Science & Innovative Research (AcSIR)

2. CSIR-NPL Campus

3. New Delhi-110012

4. India

5. Physics of Energy Harvesting Division

6. Sophisticated and Analytical Instrumentation

7. CSIR-National Physical Laboratory (CSIR-NPL)

8. Apex Level Standards & Industrial Metrology

9. Department of Micro and Nanosciences

10. Aalto University

11. FI-00076 Aalto

12. Finland

Abstract

Stress engineering is shown to have a significant influence on the defect states, surface morphology and electronic properties of a GaN film grown on c-sapphire.

Funder

Council for Scientific and Industrial Research

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2016/CP/C6CP00484A

Reference44 articles.

1. The Future Availability of Natural Resources, World Economic Forum, November 2014

2. M. Razeghi and M.Henini, Optoelectronic Devices: III Nitrides, Elsevier Ltd, 2004, ISBN: 978-0-08-044426-0

3. InGaN Solar Cells: Present State of the Art and Important Challenges