Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection-Reference-Cited by-同舟云学术

Molecular gated-AlGaN/GaN high electron mobility transistor for pH detection

Published:2018 Issue:12 Volume:143 Page:2784-2789
ISSN:0003-2654
Container-title:The Analyst
language:en
Short-container-title:Analyst

Author:

Ding Xiangzhen¹²³⁴⁵^ORCID,Yang Shuai¹²³⁴⁵,Miao Bin¹²³⁴⁵,Gu Le¹²³⁴⁵,Gu Zhiqi¹²³⁴⁵,Zhang Jian⁶⁷⁸⁵,Wu Baojun⁹²¹⁰¹¹⁵,Wang Hong⁹²¹⁰¹¹⁵,Wu Dongmin¹²³⁴⁵,Li Jiadong¹²³⁴⁵

Affiliation:

1. i-Lab

2. Suzhou Institute of Nano-Tech and Nano-Bionics

3. Chinese Academy of Sciences

4. Suzhou 215125

5. People's Republic of China

6. Innovative Center for Advanced Materials (ICAM)

7. Hangzhou Dianzi University

8. Hangzhou

9. Division of Nano-devices and Materials

10. Chinese Academy of Sciences (CAS)

11. Suzhou 215123

Abstract

A molecular gated-AlGaN/GaN high electron mobility transistor has been developed for pH detection.

Funder

National Natural Science Foundation of China

Youth Innovation Promotion Association of the Chinese Academy of Sciences

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrochemistry,Spectroscopy,Environmental Chemistry,Biochemistry,Analytical Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/AN/C8AN00032H

Reference35 articles.

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4. The pH-sensing properties of tantalum pentoxide films fabricated by metal organic low pressure chemical vapor deposition

5. Development, Operation, and Application of the Ion-Sensitive Field-Effect Transistor as a Tool for Electrophysiology

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