Threshold switching in chalcogenide GeTe and GeTeS thin films prepared <i>via</i> plasma enhanced atomic layer deposition-Reference-Cited by-同舟云学术

Threshold switching in chalcogenide GeTe and GeTeS thin films prepared via plasma enhanced atomic layer deposition

Published:2022 Issue:44 Volume:10 Page:16803-16812
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ryu Jin Joo¹²,Jeon Kanghyoek¹,Sohn Hyunchul²,Kim Gun Hwan¹^ORCID

Affiliation:

1. Division of Advanced Materials, Korea Research Institute of Chemical Technology (KRICT), 141 Gajeong-Ro Yuseong-Gu, Daejeon 34114, Republic of Korea

2. Department of Materials Science and Engineering, Yonsei University, Seoul 03722, Republic of Korea

Abstract

Multi-component chalcogenide thin films of GeTex and GeTexS1−x are prepared by atomic layer deposition technique. With the conformal deposition characteristics, its electrical properties of threshold switching are demonstrated for emerging computing.

Funder

National Research Foundation of Korea

Korea Research Institute of Chemical Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC03656H

Reference31 articles.

1. Physics for neuromorphic computing

2. Emerging Memristive Artificial Synapses and Neurons for Energy‐Efficient Neuromorphic Computing

3. Emerging Artificial Synaptic Devices for Neuromorphic Computing

4. Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices

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