Design, development, EUVL applications and nano mechanical properties of a new HfO2 based hybrid non-chemically amplified resist
Author:
Affiliation:
1. School of Basic Sciences
2. Indian Institute of Technology Mandi
3. India
4. School of Computing and Electrical Engineering
Abstract
A new HfO2-based hybrid n-CAR resist material has been developed for EUVL applications and its nano-mechanical properties have been reported.
Funder
Intel Corporation
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2016/RA/C6RA10575K
Reference27 articles.
1. Resist Materials and Processes for Extreme Ultraviolet Lithography
2. Evaluation of an advanced dual hard mask stack for high resolution pattern transfer
3. Characterization of the Photoacid Diffusion Length and Reaction Kinetics in EUV Photoresists with IR Spectroscopy
4. Nanoparticle photoresists from HfO2 and ZrO2 for EUV patterning
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