The pivotal role of oxygen interstitials in the dynamics of growth and movement of germanium nanocrystallites-Reference-Cited by-同舟云学术

The pivotal role of oxygen interstitials in the dynamics of growth and movement of germanium nanocrystallites

Published:2015 Issue:33 Volume:17 Page:6370-6375
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Chen K. H.¹²³,Wang C. C.¹²³,Lai W. T.¹²³⁴⁵,George T.¹²³,Li P. W.¹²³⁴⁵

Affiliation:

1. Department of Electrical Engineering and Center for Nano Science and Technology

2. National Central University

3. ChungLi, Republic of China

4. Department of Electronics Engineering

5. National Chiao Tung University

Abstract

An unusual “symbiotic” chain reaction is activated by oxygen interstitials acting in concert with Ge and Si interstitials, inducing the coalescence of sparsely-distributed Ge nanocrystallites and their autonomous migration within SiO₂/Si₃N₄ layers.

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CE/C5CE00991J

Reference27 articles.

1. Silicon-Germanium Nanostructures for Light Emitters and On-Chip Optical Interconnects

2. Ge/Si Self-Assembled Quantum Dots and Their Optoelectronic Device Applications

3. Coarsening, Mixing, and Motion: The Complex Evolution of Epitaxial Islands

4. Evolution and coarsening of Si-rich SiGe islands epitaxially grown at high temperatures on Si(001)

5. Ge dots embedded in SiO2obtained by oxidation of Si/Ge/Si nanostructures

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