An ultrahigh-vacuum goniometer for in situ soft X-ray standing-wave analysis of semiconductor surfaces

Abstract

An ultrahigh-vacuum goniometer was developed for in situ X-ray standing-wave (XSW) analysis of semiconductor surfaces prepared by molecular-beam epitaxy (MBE). Although two ultrahigh-vacuum motors for χ and φ rotating axes are inside the analysis chamber, low-energy photoelectrons can still be collected as the magnetic field is sufficiently suppressed by using metal shields. Furthermore, the sample can be annealed at temperatures higher than 870 K on the goniometer in the analysis chamber. This goniometer is used at beamline 1A (BL-1A) at the Photon Factory, where both monochromated soft X-rays and UV radiation are available. This analysis system was shown to be suitable not only for in situ soft-XSW and X-ray absorption near-edge structure (XANES) studies but also for synchrotron radiation photoelectron spectroscopy (SRPES) studies. The annealing effects on an S-adsorbed GaAs(001) surface could be studied by SRPES, XANES and XSW using this new goniometer.