Strain analysis in Si micro-electromechanical systems by dynamical X-ray diffraction
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Published:2012-03-31
Issue:3
Volume:45
Page:496-502
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ISSN:0021-8898
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Container-title:Journal of Applied Crystallography
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language:
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Short-container-title:J Appl Cryst
Abstract
Long-range strain in nearly perfect crystalline materials can be detected by dynamical X-ray diffraction. Long-range strain due to uniform bending or torsion is undetectable by conventional methods when the specimen is vertical in a symmetrical Laue setting, but it can be detected by rotating the specimen along the scattering vector. This method is applied to Si devices for a resonating torsion mirror in a micro-electromechanical system. X-ray transmission topography clearly reveals local strain concentrations as enhancements or reductions in the diffraction intensity where non-uniform strain exists. In conjunction with reflection plane-wave topography, a model of local strain is proposed and the strain qualitatively analysed.
Publisher
International Union of Crystallography (IUCr)
Subject
General Biochemistry, Genetics and Molecular Biology