Parametric Study of the Reltron Oscillators

Abstract

In this paper, effect of the input DC electrical parameters, such as, pulse shape, cathode voltage and the postacceleration voltage on the performance of reltron oscillator have been investigated. For this purpose, a typical reltron oscillator has been designed and simulated. The mode of excitation, resonant frequency and electric field patterns in the RF modulation cavity of the reltron structure has been studied through electromagnetic simulation. The RF output performance and effect of DC electric pulse shape is studied through 3D PIC simulation. To get a practical insight of the excitation signal effect on the performance of device operation, various pulse shapes with different rise, hold and fall time have been studied the pulse of hold time 70 ns and rise and fall time of 5 ns gives maximum stable RF power. Device parametric analysis for the different cathode and post-acceleration voltages has also been investigated. With a beam current of 750 A, cathode voltage of 200 kV and post-acceleration voltage of 800 kV, the device provides ~350 MW with ~46% efficiency.