Cr doping-induced ferromagnetism in SnTe thin films

Abstract

AbstractTransition-metal doped topological insulators have been widely explored since the observation of quantum anomalous Hall effect (QAHE). Subsequently, the magnetic (Pb,Sn)(Te,Se) was predicted to possibly possess a high-temperature QAHE state. However, the fundamental understanding of Cr-doping-induced ferromagnetism in this system remains unclear. Here, we report the stable ferromagnetism in the high-crystalline Cr-doped SnTe films. Upon Cr doping, the magnetoconductance unveils a crossover from weak antilocalization to weak localization. Further increasing the Cr concentration to Cr0.17Sn0.83Te introduces a strong ferromagnetism with a Curie temperature of ~140 K. We detected a sizable spin moment ms = 2.28 ± 0.23 μB/Cr and a suppressed orbital moment ml = 0.02 μB/Cr. Cr dopants prefer to substitute the Sn sites and behave as divalent cations, as indicated by the experimental results and density function theory calculations. The controllable growth of magnetic SnTe thin films provides enlightenment towards the high-temperature QAHE in magnetic TCIs for the desired dissipationless transport in electronics.