Author:
Breuer Thomas,Nielen Lutz,Roesgen Bernd,Waser Rainer,Rana Vikas,Linn Eike
Publisher
Springer Science and Business Media LLC
Reference35 articles.
1. International Technology Roadmap for Semiconductors. http://www.itrs.net/Links/2013ITRS/Home2013.htm. (2013), (Date of access: 15/10/2015).
2. Waser, R., Dittmann, R., Staikov, G. & Szot, K. Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects and Challenges. Adv. Mater. 21, 2632–2663 (2009).
3. Yang, J. J., Strukov, D. B. & Stewart, D. R. Memristive devices for computing. Nat. Nanotechnology 8, 13–24 (2013).
4. Pan, F., Gao, S., Chen, C., Song, C. & Zeng, F. Recent progress in resistive random access memories: Materials, switching mechanisms and performance. Mater. Sci. Eng. R-Rep. 83, 1–59 (2014).
5. Menzel, S., Linn, E. & Waser, R. Redox-based Resistive Memory. John Wiley & Sons Ltd, United Kingdom 1, 137–161, doi: 10.1002/9781118958254.ch08 (2015).
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