High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep42973.pdf
Reference66 articles.
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3. Sun, X. et al. Improved performance of GaN metal-semiconductor-metal ultraviolet detectors by depositing SiO2 nanoparticles on a GaN surface. Appl. Phys. Lett. 98, 121117 (2011).
4. Tsai, D.-S. et al. Solar-blind photodetectors for harsh electronics. Sci. Rep. 3, 2628 (2013).
5. Velazquez, R., Aldalbahi, A., Rivera, M. & Feng, P. Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors. AIP Adv. 6, 85117 (2016).
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