The determining factor of a preferred orientation of GaN domains grown on m-plane sapphire substrates
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep16236.pdf
Reference28 articles.
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2. Chichibu, S. F. et al. Origin of defect-insensitive emission probability in In-containing (Al,In,Ga)N alloy semiconductors. Nat. Mater. 5, 810–816 (2006).
3. Huang, J. J. et al. Improved a-plane gan quality grown with flow modulation epitaxy and epitaxial lateral overgrowth on r-plane sapphire substrate. Appl. Phys. Lett. 92, 231902 (2008).
4. Chakraborty, A. et al. Nonpolar ingan/gan emitters on reduced-defect lateral epitaxially overgrown a-plane gan with drive-current-independent electroluminescence emission peak. Appl. Phys. Lett. 85, 5143–5145 (2004).
5. Zhu, T., Martin, D. & Grandjean, N. M-plane gan grown on m-plane sapphire by hydride vapor phase epitaxy. Jpn. J. Appl. Phys. 48, 020226 (2009).
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