Origin of Degradation Phenomenon under Drain Bias Stress for Oxide Thin Film Transistors using IGZO and IGO Channel Layers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep07884.pdf
Reference23 articles.
1. Nguyen, C. P. T. et al. Bias-stress-induced threshold voltage shift dependence of negative charge trapping in the amorphous indium tin zinc oxide thin-film transistors. Semicond. Sci. Technol. 28, 105014 (2013).
2. Nomura, K., Kamiya, T. & Hosono, H. Interface and bulk effects for bias–light-illumination instability in amorphous-In–Ga–Zn–O thin-film transistors. J. Soc. Inf. Display. 18, 789–795 (2010).
3. Chen, Y. -C. et al. Characterization of environment-dependent hysteresis in indium gallium zinc oxide thin film transistors. Surf. Coat. Technol. 231, 531 (2013).
4. Bak, J. Y., Yang, S. & Yoon, S. M. Transparent Al–In–Zn–O Oxide semiconducting films with various in composition for thin-film transistor applications. Ceramic. Int. 39, 2561 (2013).
5. Jung, H. Y. et al. Origin of the improved mobility and photo-bias stability in a double-channel metal oxide transistor. Sci. Rep. 4, 3765 (2014).
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