Resistivity saturation in Kondo insulators

Abstract

AbstractResistivities of heavy-fermion insulators typically saturate below a characteristic temperature T*. For some, metallic surface states, potentially from a non-trivial bulk topology, are a likely source of residual conduction. Here, we establish an alternative mechanism: at low temperature, in addition to the charge gap, the scattering rate turns into a relevant energy scale, invalidating the semi-classical Boltzmann picture. Then, finite lifetimes of intrinsic carriers drive residual conduction, impose the existence of a crossover T*, and control—now on par with the gap—the quantum regime emerging below it. Assisted by realistic many-body simulations, we showcase the mechanism for the Kondo insulator Ce3Bi4Pt3, for which residual conduction is a bulk property, and elucidate how its saturation regime evolves under external pressure and varying disorder. Deriving a phenomenological formula for the quantum regime, we also unriddle the ill-understood bulk conductivity of SmB6—demonstrating a wide applicability of our mechanism in correlated narrow-gap semiconductors.