Geometrically designed domain wall trap in tri-segmented nickel magnetic nanowires for spintronics devices-Reference-Cited by-同舟云学术

Geometrically designed domain wall trap in tri-segmented nickel magnetic nanowires for spintronics devices

Published:2019-06-21 Issue:1 Volume:9 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Nasirpouri Farzad^ORCID,Peighambari-Sattari Seyed-Majid,Bran Cristina,Palmero Ester M.^ORCID,Berganza Eguiarte Eider,Vazquez Manuel,Patsopoulos Aristotelis,Kechrakos Dimitris^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-019-45553-w.pdf

Reference54 articles.

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2. Lendecke, P., Eiselt, R., Meier, G. & Merkt, U. Temperature dependence of domain-wall depinning fields in constricted Permalloy nanowires. Journal of Applied Physics 103, 073909 (2008).

3. McMichael, R. D., Eicke, J., Donahue, M. J. & Porter, D. G. Domain wall traps for low-field switching of submicron elements. Journal of Applied Physics 87, 7058–7060 (2000).

4. Atkinson, D. et al. Magnetic domain-wall dynamics in a submicrometre ferromagnetic structure. Nature materials 2, 85–87 (2003).

5. Faulkner, C. C. In Nanomagnetism And Spintronics: Fabrication, Materials, Characterization and Applications 343–374 (World Scientific, 2011).

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