The resonant interaction between anions or vacancies in ZnON semiconductors and their effects on thin film device properties
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-02336-5.pdf
Reference36 articles.
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3. Ryu, B., Noh, H.-K., Choi, E.-A. & Chang, K. J. O-vacancy as the origin of negative bias illumination stress instability in amorphous In–Ga–Zn–O thin film transistors. Appl. Phys. Lett. 97, 022108, doi: 10.1063/1.3464964 (2010).
4. Nahm, H.-H., Kim, Y.-S. & Kim, D. H. Instability of amorphous oxide semiconductors via carrier-mediated structural transition between disorder and peroxide state. Physica. Status Solidi. B 249, 1277 (2012).
5. Robertson, J. & Guo, Y. Light induced instability mechanism in amorphous InGaZn oxide semiconductors. Appl. Phys. Lett. 104, 162102, doi: 10.1063/1.4872227 (2014).
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