Colloidal stability and dielectric behavior of eco-friendly synthesized zinc oxide nanostructures from Moringa seeds

Author:

José Basílio José Augusto,Shinde Mahendra Devidas

Abstract

AbstractThis study centers on the environmentally benign synthesis of zinc oxide nanoparticles (ZnO NPs) derived from Zn (CH3COO)2·2H2O and Moringa seeds. The synthesized nanostructures underwent comprehensive characterization utilizing diverse analytical techniques, encompassing X-ray diffraction (XRD), UV–VIS spectroscopy, field-emission scanning electron microscopy (FESEM), X-ray photoelectron spectroscopy (XPS), and Raman spectroscopy. XRD measurements coupled with W–H plot transformation unequivocally confirmed the formation of ZnO nanostructures, characterized by an average size of 24.9 nm. UV–VIS spectroscopy, complemented by Kubelka Munk curve analysis, elucidated the direct conduction and determined a bandgap of 3.265 eV. FESEM analysis revealed minimal particle aggregation, showcasing well-defined grain boundaries spanning sizes from 20.4 to 87.7 nm. XPS analysis substantiated the presence of Zn (2p), Zn (3p), Zn (3d), and O (1s). Raman spectroscopy identified E2H as the predominant mode, followed by E1(TO) and (E2H-E2L). ZnO thin films, fabricated via pulsed laser deposition (PLD) and deposited onto silicon (100) substrates, exhibited exemplary morphology and discernible topography, characterized by a normal grain size distribution. Zeta potential tests yielded a value of approximately ($$\mathcalligra{z}$$ z ~ − 43.8 mV), indicative of the commendable stability of the colloidal suspension, likely attributable to low particle aggregation. Dielectric measurements conducted on sintered pellets at 900 °C unveiled elevated capacitance and dielectric constant at low frequencies across the temperature range of 289.935–310 K. These findings affirm the potential utility of environmentally synthesized ZnO for a spectrum of applications, including energy devices and nanofluids.

Publisher

Springer Science and Business Media LLC

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