Author:
Cao Dezhong,Wang Bo,Lu Dingze,Zhou Xiaowei,Ma Xiaohua
Abstract
AbstractSelf-supporting nanoporous InP membranes are prepared by electrochemical etching, and are then first transferred to highly reflective (> 96%) mesoporous GaN (MP-GaN) distributed Bragg reflector (DBR) or quartz substrate. By the modulation of bandgap, the nanoporous InP samples show a strong photoluminescence (PL) peak at 541.2 nm due to the quantum size effect of the nanoporous InP structure. Compared to the nanoporous InP membrane with quartz substrate, the nanoporous membrane transferred to DBR shows a twofold enhancement in PL intensity owing to the high light reflection effect of bottom DBR.
Funder
China Postdoctoral Science Foundation
Natural Science Basic Research Program of Shaanxi Province
Natural Science Foundation of Shaanxi Provincial Department of Education, China
Start-Up Funds of Xi’an Polytechnic University, China
National Natural Science Foundation of China
Publisher
Springer Science and Business Media LLC
Cited by
3 articles.
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