Author:
Lee Yongsu,Kim Seung-Mo,Kim Kiyung,Kim So-Young,Lee Ho-In,Kwon Heejin,Lee Hae-Won,Kim Chaeeun,Some Surajit,Hwang Hyeon Jun,Lee Byoung Hun
Abstract
AbstractP-type ternary switch devices are crucial elements for the practical implementation of complementary ternary circuits. This report demonstrates a p-type ternary device showing three distinct electrical output states with controllable threshold voltage values using a dual-channel dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]-thiophene–graphene barristor structure. To obtain transfer characteristics with distinctively separated ternary states, novel structures called contact-resistive and contact-doping layers were developed. The feasibility of a complementary standard ternary inverter design around 1 V was demonstrated using the experimentally calibrated ternary device model.
Funder
National Research Foundation of Korea
Publisher
Springer Science and Business Media LLC
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