Surface Plasmon Coupling in GaN:Eu Light Emitters with Metal-Nitrides
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Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-31821-8.pdf
Reference51 articles.
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2. Lozykowski, H. J., Jadwisienczak, W. M., Han, J. & Brown, I. G. Luminescence properties of GaN and Al0.14Ga0.86N/GaN superlattice doped with europium. Appl. Phys. Lett. 77, 767 (2000).
3. Kenyon, A. J. Recent developments in rare-earth doped materials for optoelectronics. Progress in Quantum Elect. 26, 225–284 (2002).
4. Hömmerich, U. et al. Photoluminescence studies of rare earth (Er, Eu, Tm) in situ dopedGaN. Mat. Sc. Eng. B 105, 91–96 (2003).
5. Kim, J. H. & Holloway, P. H. Room-temperature photoluminescence and electroluminescence properties of sputter grown gallium nitride doped with europium. J. Appl. Phys. 95, 4787 (2004).
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