Spatially-resolved optical and structural properties of semi-polar $$\mathrm{(11}\bar{2}\mathrm{2)}$$ (11 2 ¯ 2) Al x Ga1−x N with x up to 0.56-Reference-Cited by-同舟云学术

Spatially-resolved optical and structural properties of semi-polar $$\mathrm{(11}\bar{2}\mathrm{2)}$$ (11 2 ¯ 2) Al x Ga1−x N with x up to 0.56

Published:2017-09-07 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Bruckbauer Jochen^ORCID,Li Zhi,Naresh-Kumar G.,Warzecha Monika,Edwards Paul R.^ORCID,Jiu Ling,Gong Yipin,Bai Jie,Wang Tao,Trager-Cowan Carol,Martin Robert W.^ORCID

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-10923-9.pdf

Reference38 articles.

1. Kneissl, M. & Rass, J. (eds) III-Nitride Ultraviolet Emitters (Springer International Publishing, 2016).

2. Kneissl, M. et al. Advances in group III-nitride-based deep UV light-emitting diode technology. Semicond. Sci. Technol. 26, 014036 (2011).

3. Hirayama, H., Maeda, N., Fujikawa, S., Toyoda, S. & Kamata, N. Recent progress and future prospects of AlGaN-based high-efficiency deep-ultraviolet light-emitting diodes. Jpn. J. Appl. Phys. 53, 100209 (2014).

4. Zhao, S. et al. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources. Sci. Rep. 5, 8332 (2015).

5. Park, J.-S., Kim, J. K., Cho, J. & Seong, T.-Y. Review—Group III-nitride-based ultraviolet light-emitting diodes: Ways of increasing external quantum efficiency. ECS J. Solid State Sci. Technol. 6, Q42 (2017).

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