Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-017-01001-1.pdf
Reference62 articles.
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3. Chen, X., Pi, X. & Yang, D. Critical Role of Dopant Location for P-Doped Si Nanocrystals. J. Phys. Chem. C 115, 661–666 (2011).
4. König, D. et al. Location and Electronic Nature of Phosphorus in the Si Nanocrystal−SiO2 System. Sci. Rep 5, 9702 (2015).
5. Yurtsever, A., Weyland, M. & Muller, D. A. Three-dimensional imaging of nonspherical silicon nanoparticles embedded in silicon oxide by plasmon tomography. Appl. Phys. Lett. 89, 151920 (2006).
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