Effect of Polarization Coulomb Field Scattering on Electrical Properties of the 70-nm Gate-Length AlGaN/GaN HEMTs
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/s41598-018-31313-9.pdf
Reference42 articles.
1. Brown, D. F., Tang, Y., Regan, D., Wong, J. & Micovic, M. Self-Aligned AlGaN/GaN FinFETs. IEEE Electron Device Lett. 8, 1445–1448 (2017).
2. Zhou, H. et al. DC and RF Performance of AlGaN/GaN/SiC MOSHEMTs With Deep Sub-Micron T-Gates and Atomic Layer Epitaxy MgCaO as Gate Dielectric Self-Aligned AlGaN/GaN FinFETs. IEEE Electron Device Lett. 38, 1409–1412 (2017).
3. Huang, S. et al. Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices. IEEE Trans. Electron Devices 65, 207–214 (2018).
4. Chiu, H. C. et al. RF Performance of In Situ SiNx Gate Dielectric AlGaN/GaN MISHEMT on 6-in Silicon-on-Insulator Substrate. IEEE Trans. Electron Devices 64, 4065–4070 (2017).
5. Zhang, K. et al. High-Linearity AlGaN/GaN FinFETs for Microwave Power Applications. IEEE Electron Device Lett. 38, 615–618 (2017).
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