Author:
Ganguly Sudin,Maiti Santanu K.
Abstract
AbstractThis work explores the potential for achieving correlated disorder in electrical circuits by utilizing reactive elements. By establishing a direct correspondence between the tight-binding Hamiltonian and the admittance matrix of the circuit, a novel approach is presented. The localization phenomena within the circuit are investigated through the analysis of the two-port impedance. To introduce correlated disorder, the Aubry–André–Harper (AAH) model is employed. Both one-dimensional and quasi-one-dimensional AAH structures are examined and effectively mapped to their tight-binding counterparts. Notably, transitions from a high-conducting phase to a low-conducting phase are observed in these circuits, highlighting the impact of correlated disorder.
Publisher
Springer Science and Business Media LLC
Reference30 articles.
1. Harper, P. G. Single band motion of conduction electrons in a uniform magnetic field. Proc. Phys. Soc. Lond. A 68, 874 (1955).
2. Aubry, S. & André, G. Analyticity breaking and Anderson localization in incommensurate lattices. Ann. Israel Phys. Soc. 3, 133 (1980).
3. Biddle, J. & Das Sarma, S. Predicted mobility edges in one-dimensional incommensurate optical lattices: An exactly solvable model of Anderson localization. Phys. Rev. Lett. 104, 070601 (2010).
4. Rossignolo, M. & Dell’Anna, L. Localization transitions and mobility edges in coupled Aubry–André chains. Phys. Rev. B 99, 054211 (2019).
5. Kraus, Y. E., Lahini, Y., Ringel, Z., Verbin, M. & Zilberberg, O. Topological states and adiabatic pumping in quasicrystals. Phys. Rev. Lett. 109, 106402 (2012).