Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence-Reference-Cited by-同舟云学术

Effect of carrier confinement on effective mass of excitons and estimation of ultralow disorder in Al x Ga1−x As/GaAs quantum wells by magneto-photoluminescence

Published:2017-07-07 Issue:1 Volume:7 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Haldar S.,Dixit V. K.,Vashisht Geetanjali,Khamari Shailesh Kumar,Porwal S.,Sharma T. K.,Oak S. M.

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/s41598-017-05139-w.pdf

Reference62 articles.

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3. Nelson, E. C. et al. Epitaxial growth of three-dimensionally architectured optoelectronic devices. Nat. Mater. 10, 676–681 (2011).

4. Jura, M. et al. Unexpected features of branched flow through high-mobility two-dimensional electron gases. Nature Phys. 3, 841–845 (2007).

5. Kozhevnikov, M., Ashkinadze, B., Cohen, E. & Ron, A. Low-temperature electron mobility studied by cyclotron resonance in ultrapure GaAs crystals. Phys. Rev. B 52, 17165 (1995).

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