Author:
Yoshimatsu K.,Hasegawa N.,Nambu Y.,Ishii Y.,Wakabayashi Y.,Kumigashira H.
Abstract
AbstractTi2O3 exhibits unique metal–insulator transition (MIT) at ~ 450 K over a wide temperature range of ~ 150 K. The close relationship between MIT and crystal deformation has been proposed. However, as physical properties are governed by the thermodynamic equilibrium in bulk systems, conducting experimental studies under different lattice deformations remains challenging. Epitaxial thin films can offer high flexibility to accommodate adaptive crystal lattices and provide efficient platforms for investigating the MIT. In this study, we report the synthesis of corundum-type Ti2O3 films on various growth temperatures. We found that the metallic ground states appeared in the films grown at low temperatures. The electronic ground states were further investigated by the electronic-structure calculations. Results suggest that the electrical properties of Ti2O3 films were governed by the c/a ratio of the crystal structure, and the absence of the MIT was attributed to the lattice deformation characterized by an elongated c lattice constant.
Funder
Grant-in-Aid for Scientific Research
Asahi Glass Foundation
Futaba Foundation
Nippon Sheet Glass Foundation for Materials Science and Engineering
Nagamori Foundation
MEXT Elements Strategy Initiative to Form Core Research Center
Japan Society for the Promotion of Science Foundation, CREST
Publisher
Springer Science and Business Media LLC
Reference44 articles.
1. Honig, J. M. & Reed, T. B. Electrical properties of Ti2O3 single crystals. Phys. Rev. 174, 1020–1026 (1968).
2. Uchida, M., Fujioka, J., Onose, Y. & Tokura, Y. Charge dynamics in thermally and doping induced insulator–metal transitions of (Ti1−xVx)2O3. Phys. Rev. Lett. 101, 066406 (2008).
3. Chang, C. F. et al. c-Axis dimer and its electronic break up: the insulator-to-metal transition in Ti2O3. Phys. Rev. X 8, 021004 (2018).
4. Capponi, J. J., Marezio, M., Dumas, J. & Schlenker, C. Lattice parameters variation with temperature of Ti2O3 and (Ti0.98V0.02)2O3 from single crystal x-ray data. Solid State Commun. 20, 893–896 (1976).
5. Van Zandt, L. L., Honig, J. M. & Goodenough, J. B. Resistivity and magnetic order in Ti2O3. J. Appl. Phys. 39, 594–595 (1968).
Cited by
13 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献