Tandem-structured, hot electron based photovoltaic cell with double Schottky barriers
Author:
Publisher
Springer Science and Business Media LLC
Subject
Multidisciplinary
Link
http://www.nature.com/articles/srep04580.pdf
Reference30 articles.
1. Shockley, W. & Queisser, H. J. Detailed balance limit of efficiency of p-n junction solar cells. J. Appl. Phys. 32, 510–519 (1961).
2. Semonin, O. E. et al. Peak external photocurrent quantum efficiency exceeding 100% via MEG in a quantum dot solar cell. Science 334, 1530–1533 (2011).
3. Dang, X. N. et al. Tunable localized surface plasmon-enabled broadband light-harvesting enhancement for high-efficiency panchromatic dye-sensitized solar cells. Nano Lett. 13, 637–642 (2013).
4. Atwater, H. A. & Polman, A. Plasmonics for improved photovoltaic devices. Nature Mater. 9, 205–213 (2010).
5. Reineck, P. et al. A solid-state plasmonic solar cell via metal nanoparticle self-assembly. Adv. Mater. 24, 4750–4755 (2012).
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