Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length-Reference-Cited by-同舟云学术

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Low-resistance metal contacts to encapsulated semiconductor monolayers with long transfer length

Published:2022-09-01 Issue:9 Volume:5 Page:579-585
ISSN:2520-1131
Container-title:Nature Electronics
language:en
Short-container-title:Nat Electron

Author:

Liu Yang^ORCID,Liu Song,Wang Zhiying,Li Baichang^ORCID,Watanabe Kenji^ORCID,Taniguchi Takashi^ORCID,Yoo Won Jong^ORCID,Hone James^ORCID

Funder

MEXT | Japan Society for the Promotion of Science

National Research Foundation of Korea

DOE | Advanced Research Projects Agency - Energy

Publisher

Springer Science and Business Media LLC

Subject

Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials

Link

https://www.nature.com/articles/s41928-022-00808-9.pdf

Reference38 articles.

1. Radisavljevic, B., Radenovic, A., Brivio, J., Giacometti, V. & Kis, A. Single-layer MoS2 transistors. Nat. Nanotechnol. 6, 147–150 (2011).

2. Wang, Q. H., Kalantar-Zadeh, K., Kis, A., Coleman, J. N. & Strano, M. S. Electronics and optoelectronics of two-dimensional transition metal dichalcogenides. Nat. Nanotechnol. 7, 699–712 (2012).

3. Manzeli, S., Ovchinnikov, D., Pasquier, D., Yazyev, O. V. & Kis, A. 2D transition metal dichalcogenides. Nat. Rev. Mater. 2, 17033 (2017).

4. Chhowalla, Manish, Jena, Debdeep & Zhang, H. Two-dimensional semiconductors for transistors. Nat. Rev. Mater. 1, 16052 (2016).

5. Liu, Y. et al. Promises and prospects of two-dimensional transistors. Nature 591, 43–53 (2021).

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