How we proposed the spin transistor
Author:
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Instrumentation,Electronic, Optical and Magnetic Materials
Link
http://www.nature.com/articles/s41928-018-0163-4.pdf
Cited by 25 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Tunable spin photogalvanic effect in two-dimensional van der Waals ferroelectric semiconductors with spin-orbit coupling;Physical Review B;2024-05-03
2. Challenges and opportunities in searching for Rashba-Dresselhaus materials for efficient spin-charge interconversion at room temperature;Current Opinion in Solid State and Materials Science;2024-03
3. MgTe (110) semiconductor for a magnetic-element-free nonballistic spin-field-effect transistor;Physical Review B;2024-02-15
4. Magnetic phase transition regulated by an interface coupling effect in CrBr3/electride Ca2N van der Waals heterostructures;Physical Chemistry Chemical Physics;2024
5. Emerging Spintronic Materials and Functionalities;Advanced Materials;2023-11-03
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