Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer-Reference-Cited by-同舟云学术

Achieving high mobility, low-voltage operating organic field-effect transistor nonvolatile memory by an ultraviolet-ozone treating ferroelectric terpolymer

Published:2016-11-08 Issue:1 Volume:6 Page:
ISSN:2045-2322
Container-title:Scientific Reports
language:en
Short-container-title:Sci Rep

Author:

Xiang Lanyi,Wang Wei,Xie Wenfa

Publisher

Springer Science and Business Media LLC

Subject

Multidisciplinary

Link

http://www.nature.com/articles/srep36291.pdf

Reference39 articles.

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2. Wang, W. et al. Highly reliable top-gated thin-film transistor memory with semiconducting, tunneling, charge-trapping, and blocking layers all of flexible polymers. ACS Appl. Mater. Interfaces 7, 10957–10965 (2015).

3. Shih, C.-C., Chiu, Y.-C., Lee, W.-Y., Chen, J.-Y. & Chen, W.-C. Conjugated polymer nanoparticles as nano floating gate electrets for high performance nonvolatile organic transistor memory devices. Adv. Funct. Mater. 25, 1511–1519 (2015).

4. Gelinck, G. H. et al. Blom, All-polymer ferroelectric transistors. Appl. Phys. Lett. 87, 092903 (2005).

5. Unni, K. N., Bettignies, N. R. D., Dabos-Seignon, S. & Nunzi, J.-M. A nonvolatile memory element based on an organic field-effect transistor. Appl. Phys. Lett. 85, 1823–1825 (2004).

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